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| BC182...BC184 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range BC182 BC183, BC184 BC182 BC183, BC184 Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 45 50 30 6 100 350 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 A at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 A BC182, BC183 BC184 BC182 BC183 BC184 BC182, BC183 BC184 BC182 BC183, BC184 Symbol hFE hFE hFE hFE hFE hFE hFE ICBO IEBO BC182 BC183, BC184 BC182 BC183, BC184 V(BR)CBO V(BR)CEO V(BR)EBO Min. 40 100 120 120 250 80 130 60 45 50 30 6 Max. 500 800 800 15 15 15 Unit nA nA V V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 27/12/2007 BC182...BC184 Characteristics at Ta = 25 OC Parameter Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at VCE = 5 V, IC = 2 mA Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol VCE(sat) VBE(sat) VBE(on) fT Cob Min. 0.55 150 Max. 0.25 0.6 1.2 0.7 5 Unit V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 27/12/2007 |
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